PART |
Description |
Maker |
IRHN8230 IRHN7230 |
TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) 晶体管N沟道(BVdss \u003d 200V的电压,的Rds(on)\u003d 0.40ohm,身份证\u003d 9.0,9.0
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International Rectifier, Corp. IRF[International Rectifier]
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JANTX2N6758 JANTXV2N6758 |
POWER MOSFET N-CHANNEL(BVdss=200V/ Rds(on)=0.40ohm/ Id=9A) POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9A) POWER MOSFET N-CHANNEL(BVdss=200V Rds(on)=0.40ohm Id=9A)
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IRF[International Rectifier]
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JANTXV2N6766 JANTX2N6766 |
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.085ohm, Id=30A) POWER MOSFET N-CHANNEL(BVdss=200V Rds(on)=0.085ohm Id=30A)
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IRF[International Rectifier]
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MURB1620CTRT4 |
16A 200V Ultrafast Rectifier
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ON Semiconductor
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FDD18N20LZ |
N-Channel UniFETTM MOSFET 200V, 16A, 125m
|
Fairchild Semiconductor
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HFB16HY20CC |
200V 16A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-257AA package
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International Rectifier
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STK10C48-5P35 STK10C48-5P35I STK10C48-5P30 STK10C4 |
NVRAM (EEPROM Based) Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:10A; Holding Current:50mA Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Current, It av:10A; Gate Trigger Current Max, Igt:50mA; Holding Current:50mA RoHS Compliant: Yes Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:15A; Holding Current:70mA Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:20mA; Current, It av:16A; Gate Trigger Current Max, Igt:20mA; Holding Current:35mA RoHS Compliant: Yes Triac; Triac Type:Internally Triggered; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:35mA Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:80mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:80mA Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:10A; Gate Trigger Current Max, Igt:50mA NVRAM中(EEPROM的基础 Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:12A; Gate Trigger Current Max, Igt:50mA NVRAM中(EEPROM的基础
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Atmel, Corp.
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MIL-PRF-19500/564 |
POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) 功率MOSFET P沟道(BVdss \u003d- 100V的,的Rds(on)\u003d 0.30ohm,身份证\u003d- 6.5A
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International Rectifier, Corp.
|
IRFY440CM |
POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.85ohm, Id=7.0A) 功率MOSFET N沟道(BVdss \u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 7.0A
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International Rectifier, Corp.
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232219314159 PR01-3R9 PR02-330K PR01-1R PR01-22K P |
WIDERSTAND LEISTUNG METALL 15R 200V 1W WIDERSTAND LEISTUNG METALL 3R9 200V 1W WIDERSTAND LEISTUNG METALL 22K 200V 1W WIDERSTAND LEISTUNG METALL 5R6 200V 1W WIDERSTAND LEISTUNG METALL 4R7 200V 1W WIDERSTAND LEISTUNG METALL 330R 200V 1W WIDERSTAND LEISTUNG METALL 6R8 200V 1W WIDERSTAND LEISTUNG METALL 22K 500V 2W WIDERSTAND LEISTUNG METALL 470K 500V 2W WIDERSTAND LEISTUNG METALL 220R 500V 2W WIDERSTAND LEISTUNG METALL 1K5 500V 2W WIDERSTAND LEISTUNG METALL 6R8 500V 2W WIDERSTAND LEISTUNG METALL 100K 500V 2W WIDERSTAND LEISTUNG METALL 18K 200V 1W WIDERSTAND LEISTUNG METALL 100R 500V 2W WIDERSTAND LEISTUNG METALL 220K 500V 2W WIDERSTAND LEISTUNG METALL 3R3 500V 2W WIDERSTAND LEISTUNG METALL 4R7 500V 2W WIDERSTAND LEISTUNG METALL 5K6 200V 1W WIDERSTAND LEISTUNG METALL 4K7 500V 2W WIDERSTAND LEISTUNG METALL 3K3 500V 2W WIDERSTAND LEISTUNG METALL 68R 200V 1W WIDERSTAND LEISTUNG METALL 1M 500V 2W WIDERSTAND LEISTUNG METALL 6K8 500V 2W WIDERSTAND LEISTUNG METALL 1K 500V 2W WIDERSTAND给付000 500V 2W的金 WIDERSTAND LEISTUNG METALL 1R 200V 1W WIDERSTAND给付1W的金受体200 WIDERSTAND LEISTUNG METALL 150K 200V 1W WIDERSTAND给付1500W的金 WIDERSTAND LEISTUNG METALL 330K 500V 2W WIDERSTAND给付3300V 2W的金 WIDERSTAND LEISTUNG METALL 3K3 200V 1W WIDERSTAND给付1W的金3K3 200 WIDERSTAND LEISTUNG METALL 18R 200V 1W WIDERSTAND给付1W的金18受体200 WIDERSTAND LEISTUNG METALL 100R 200V 1W WIDERSTAND给付1W的金100R 200 WIDERSTAND LEISTUNG METALL 15K 500V 2W WIDERSTAND给付15000 500V 2W的金 WIDERSTAND LEISTUNG METALL 15R 500V 2W WIDERSTAND给付金属15R 500V 2W WIDERSTAND LEISTUNG METALL 3K9 200V 1W WIDERSTAND给付1W的金K9 200 WIDERSTAND LEISTUNG METALL 470R 500V 2W WIDERSTAND给付金属470R 500V 2W WIDERSTAND LEISTUNG METALL 15K 200V 1W
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Vishay Intertechnology, Inc. CommScope, Inc. Applied Micro Circuits, Corp. MicroEngineering Labs, Inc. Welwyn Components, Ltd. EAO International STMicroelectronics N.V.
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